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| FQN1N60C 600V N-Channel MOSFET QFET FQN1N60C 600V N-Channel MOSFET Features * 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V * Low gate charge ( typical 4.8 nC ) * Low Crss ( typical 3.5 pF) * Fast switching * 100 % avalanche tested * Improved dv/dt capability (R) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ! G! TO-92 GDS SSN Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain Current Drain Current Parameter Drain-Source Voltage - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FQN1N60C 600 0.3 0.18 1.2 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) Power Dissipation (TL = 25C) - Derate above 25C 33 0.3 0.3 4.5 1 3 0.02 -55 to +150 300 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJL RJA Parameter Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient (Note 6a) (Note 6b) Typ --- Max 50 140 Units C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQN1N60C Rev. A FQN1N60C 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking 1N60C Device FQN1N60C Package TO-92 Reel Size -Tape Width -Quantity 2000ea Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------ -0.6 ----- --50 250 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 0.15 A VDS = 40 V, ID = 0.3 A (Note 4) 2.0 --- -9.3 0.75 4.0 11.5 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---130 19 3.5 170 25 6 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 1.1 A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 300 V, ID = 1.1 A, RG = 25 -------- 7 21 13 27 4.8 0.7 2.7 24 52 36 64 6.2 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 59mH, IAS = 1.1A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 0.3A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 6. a) Reference point of the RJL is the drain lead b) When mounted on 3"x4.5" FR-4 PCB without any pad copper in a still air environment (RJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RCA is determined by the user's board design) Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 0.3 A VGS = 0 V, IS = 1.1 A, dIF / dt = 100 A/s (Note 4) ------ ---190 0.53 0.3 1.2 1.4 --- A A V ns C FQN1N60C Rev. A 2 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : Figure 2. Transfer Characteristics 10 0 ID, Drain Current [A] ID, Drain Current [A] 10 0 150 C -55 C 25 C o o o 10 -1 Notes : 1. 250 s Pulse Test 2. TC = 25 10 -2 10 -1 -1 Notes : 1. VDS = 40V 2. 250 s Pulse Test 10 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [ ], Drain-Source On-Resistance 25 VGS = 10V 20 I DR, Reverse Drain Current [A] 30 10 0 15 10 VGS = 20V 150 Notes : 5 Note : TJ = 25 25 10 -1 1. VGS = 0V 2. 250 s Pulse Test 0 0.0 0.5 1.0 1.5 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 250 Figure 6. Gate Charge Characteristics 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 200 VGS, Gate-Source Voltage [V] 10 VDS = 120V VDS = 300V Capacitance [pF] Ciss 150 8 VDS = 480V Coss 100 Notes ; 1. VGS = 0 V 2. f = 1 MHz 6 4 50 Crss 2 Note : ID = 1.1A 0 -1 10 0 10 0 10 1 0 1 2 3 4 5 6 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQN1N60C Rev. A 3 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.15 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 0.3 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 3 10 0 100 s 1 ms 10 ms 100 ms 0.2 0.1 DC Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -1 10 0 10 1 10 2 10 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 11. Transient Thermal Response Curve 10 2 D = 0 .5 ZJL(t), Thermal Response 10 1 0 .2 0 .1 0 .0 5 10 0 0 .0 2 0 .0 1 s in g le p u ls e N o te s : 1 . Z J L = 5 0 /W M a x . (t) 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T L = P D M * Z J ( t) L -1 0 1 2 3 10 -1 10 -5 10 -4 10 -3 10 -2 10 10 10 10 10 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FQN1N60C Rev. A 4 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS 10V Qgs Qg VGS Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG 10V VGS RL VDD VDS 90% DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time FQN1N60C Rev. A 5 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQN1N60C Rev. A 6 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET Mechanical Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters FQN1N60C Rev. A 7 www.fairchildsemi.com FQN1N60C 600V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 8 FQN1N60C Rev. A www.fairchildsemi.com |
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